Theory and experiments on open circuit voltage decay ofp‐njunction diodes with arbitrary base width, including the effects of built‐in drift field in the base and recombinations in the emitter-Reference-Cited by-同舟云学术

Theory and experiments on open circuit voltage decay ofp‐njunction diodes with arbitrary base width, including the effects of built‐in drift field in the base and recombinations in the emitter

Published:1982-12 Issue:12 Volume:53 Page:9122-9129
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ray U. C.,Agarwal S. K.,Jain S. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.330424

Reference15 articles.

1. On the Transient Behavior of Semiconductor Rectifiers

2. Measurement of Minority Carrier Lifetime and Surface Effects in Junction Devices

3. Normal modes of semiconductorp‐n–junction devices for material‐parameter determination

4. Effect of emitter recombinations on the open circuit voltage decay of a junction diode

5. Comment on ’’Normal modes of semiconductorp‐njunction devices for material‐parameter determination’’

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