Normal modes of semiconductorp‐n–junction devices for material‐parameter determination
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323290
Reference5 articles.
1. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
3. Effect of surface recombination and channel on P-N junction and transistor characteristics
4. The equivalent circuit model in solid-state electronics—III
5. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
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1. Observation of Retarded Recombination in ChargeSeparation Structures;MRS Proceedings;2003
2. Heavy doping effects on open circuit voltage decay in an abrupt p+-n junction;Solid-State Electronics;1994-10
3. Application of open circuit voltage decay to the characterisation of heavy doping parameters in a p+ emitter of a junction diode;Solid-State Electronics;1990-07
4. Rigorous analysis of the reverse recovery process in junction diodes allowing for arbitrary widths of the base and the emitter as well as heavy doping effects;Solid-State Electronics;1990-02
5. Studies of surface voltage and current transients in solar cells for accurate evaluation of minority carrier lifetime;Solid-State Electronics;1989-01
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