Comment on ’’Normal modes of semiconductorp‐njunction devices for material‐parameter determination’’
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328554
Reference9 articles.
1. Normal modes of semiconductorp‐n–junction devices for material‐parameter determination
2. A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices
3. Measurement of Minority Carrier Lifetime and Surface Effects in Junction Devices
4. Measurement of the minority-carrier transport parameters in heavily doped silicon
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1. Measurement of minority carrier lifetime of solar cells using surface voltage and current transients;Solid-State Electronics;1990-04
2. Studies of surface voltage and current transients in solar cells for accurate evaluation of minority carrier lifetime;Solid-State Electronics;1989-01
3. Recent advances in the physics of silicon P-N junction solar cells including their transient response;Progress in Quantum Electronics;1987-01
4. Photovoltaics in India;Solar Cells;1984-06
5. Photovoltage decay inp‐njunction solar cells including the effects of recombinations in the emitter;Journal of Applied Physics;1983-04
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