Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0055946
Reference46 articles.
1. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
2. Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates
3. High-power AlGaN/GaN HEMTs for Ka-band applications
4. GaN Power Transistors on Si Substrates for Switching Applications
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