Interstitial carbon‐oxygen complex in near threshold electron irradiated silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108111
Reference13 articles.
1. Low temperature electron irradiation of silicon containing carbon
2. EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon
3. Identification of a bistable defect in silicon: The carbon interstitial‐carbon substitutional pair
4. Electron Paramagnetic Resonance and Electrical Properties of the Dominant Paramagnetic Defect in Electron-Irradiatedp-Type Silicon
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