DLTS andin situ C–Vanalysis of trap parameters in swift 50 MeV Li3+ion-irradiated Ni/SiO2/Si MOS capacitors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

DLTS andin situ C–Vanalysis of trap parameters in swift 50 MeV Li3+ion-irradiated Ni/SiO2/Si MOS capacitors

Published:2011-04 Issue:4 Volume:166 Page:313-322
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Shashank N.,Singh Vikram,Gupta Sanjeev K.,Madhu K. V.,Akhtar J.,Damle R.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150.2011.553954

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation;Materials Science in Semiconductor Processing;2024-06

2. Recrystallization effects of swift heavy 209 Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-06

3. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-12

4. Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices;Radiation Effects and Defects in Solids;2016-03-03

5. Effects of heavy-ion irradiation on the electrical properties of rf-sputtered HfO2thin films for advanced CMOS devices;Radiation Effects and Defects in Solids;2012-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP