Anomalous mobility and photo‐Hall effect in ZnSe‐GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344159
Reference39 articles.
1. A theoretical analysis of electron transport in ZnSe
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3. Characterization of ZnSe grown by molecular-beam epitaxy
4. Effects of beam pressure ratios on film quality in MBE growth of ZnSe
5. Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
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2. Correlation between macroscopic transport parameters and microscopic electrical properties in GaN;Journal of Applied Physics;2005-02-15
3. Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy;Applied Physics Letters;1999-08-09
4. Electrical transport in n-type ZnMgSSe grown by molecular beam epitaxy on GaAs;Journal of Electronic Materials;1994-03
5. Transport study of ZnSe:N employing Zn(Se,Te) graded contacts;Applied Physics Letters;1993-09-27
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