Strain study of self-assembled InAs quantum dots by ion channeling technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2382421
Reference17 articles.
1. Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition
2. InAs quantum-dot lasers operating near 1.3 [micro sign]m with high characteristic temperature for continuous-wave operation
3. Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
4. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
5. Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer
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1. Compositional grading in GaAsSb grown on GaAs substrates;Journal of Crystal Growth;2014-09
2. Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition;Nanotechnology;2014-05-08
3. Effect of interfacial layer on the crystal structure of InAs/AlAs0.16Sb0.84/AlSb quantum wells;Journal of Applied Physics;2014-04-28
4. Ion beam studies of InAs/GaAs self assembled quantum dots;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
5. Ion beam studies of InAs/GaAs quantum dots after annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
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