Effect of interfacial layer on the crystal structure of InAs/AlAs0.16Sb0.84/AlSb quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4872138
Reference16 articles.
1. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
2. Antimonide-based compound semiconductors for electronic devices: A review
3. Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance
4. Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates
5. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
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