Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1862791
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2. Ion-beam mixing in crystalline and amorphous germanium isotope multilayers;Journal of Applied Physics;2011-11
3. Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si0.83Ge0.17 alloys;Journal of Applied Physics;2007-05-15
4. Amorphous–crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
5. HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si1−xGex;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
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