Bonding properties of glow‐discharge polycrystalline and amorphous Si‐C films studied by x‐ray diffraction and x‐ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350561
Reference22 articles.
1. Fabrication and properties of polycrystalline‐SiC/Si structures for Si heterojunction devices
2. Polycrystalline SiC for a Wide‐Bandgap Emitter of Si‐HBTs
3. Crystal structure of Si1−xCxfilms by plasma‐enhanced chemical vapor deposition at 700 °C
4. X‐ray photoelectron spectroscopy and Auger electron spectroscopy studies of glow discharge Si1−xCx:H films
5. Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra
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