Tunable ideal strength of ZrSe2 monolayer by charge doping-Reference-Cited by-同舟云学术

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Tunable ideal strength of ZrSe2 monolayer by charge doping

Published:2018-09-21 Issue:11 Volume:124 Page:115101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Shujing¹,Wang Xiaohui¹,Zheng Fawei¹,Zhang Ping¹²³

Affiliation:

1. Institute of Applied Physics and Computational Mathematics, Beijing 100088, China

2. HEDPS, Center for Applied Physics and Technology, Peking University, Beijing 100871, China

3. Beijing Computational Science Research Center, Beijing 100193, China

Funder

national nature science foundation of chain

science challenge project

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5049465

Reference30 articles.

1. HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

2. Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride

3. Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication

4. Growth and band gap determination of theZrSxSe2−xsingle crystal series

5. Thermoelectric properties of monolayerMSe2(M = Zr, Hf): low lattice thermal conductivity and a promising figure of merit

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2. Chalcogen composition driven enhancement of catalytic efficiency in zirconium based monolayers: insight from reaction coordinate mapping;Sustainable Energy & Fuels;2023

3. Semiconductor–Metal Phase Transition and Emergent Charge Density Waves in 1T-ZrX₂ (X = Se, Te) at the Two-Dimensional Limit;Nano Letters;2022-01-03

4. The structural, electronic, elastic, dielectric, dynamical, thermal and optical properties of Janus ZrOS monolayer: A first-principles investigation;Solid State Communications;2021-03

5. HfSe2 monolayer stability tuning by strain and charge doping;Physics Letters A;2020-08

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