HfSe2 monolayer stability tuning by strain and charge doping-Reference-Cited by-同舟云学术

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HfSe2 monolayer stability tuning by strain and charge doping

Published:2020-08 Issue:23 Volume:384 Page:126534
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Li Shujing,Zhou Mei,Wang Xiaohui,Zheng Fawei,Shao Xiaohong,Zhang Ping

Funder

National Natural Science Foundation of China

NSFC-NSAF

Science Challenge Project

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference41 articles.

1. Growth and band gap determination of theZrSxSe2−xsingle crystal series

2. HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

3. HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strained behavior of monolayer HfS2, HfSe2, and HfTe2 from molecular dynamic simulations;Materials Today Communications;2024-08

2. Strongly enhanced infrared absorption of HfSe2 monolayer by lanthanide doping: A first-principles study;Results in Physics;2023-05

3. Conversion efficiency of strained wurtzite InxGa1−x N/ZnSnN2 core/shell quantum dot solar cells under external electric field;Optoelectronics Letters;2023-03

4. Interlayer coupling and external electric field controllable electronic structures and Schottky contact of HfSeX (X = S, Se)/graphene van der Waals heterostructures;Diamond and Related Materials;2022-10

5. Modulating of electronic states and magnetic polarization in monolayered 1T-HfSe2 under non-metal atom and transition metal atom doping;Physica B: Condensed Matter;2022-08

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