Strained behavior of monolayer HfS2, HfSe2, and HfTe2 from molecular dynamic simulations-Reference-Cited by-同舟云学术

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Strained behavior of monolayer HfS2, HfSe2, and HfTe2 from molecular dynamic simulations

Published:2024-08 Issue: Volume:40 Page:110169
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Chang Xu,Li Huichao

Publisher

Elsevier BV

Reference46 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. Single-layer MoS2 transistors;Radisavljevic;Nat. Nanotechnol.,2011

3. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties;Heine;Acc. Chem. Res.,2015

4. Nature of electronic states in atomically thin MoS2 field-effect transistors;Ghatak;ACS Nano,2011

5. Ab initio calculations of the electronic and optical properties of 1T-HfX2 compounds;Hussain Reshak;Phys. B Condens. Matter,2005

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