Unveiling the stacking-dependent electronic properties of the 2D ultrathin rare-earth metalloxenes family LnX2 (Ln = Eu, Gd, Dy; X = Ge, Si)

Author:

Mihalyuk Alexey N.12ORCID,Sheverdyaeva Polina M.3ORCID,Chou Jyh-Pin4ORCID,Matetskiy Andrey V.3ORCID,Eremeev Sergey V.5ORCID,Zotov Andrey V.2,Saranin Alexander A.2ORCID

Affiliation:

1. Institute of High Technologies and Advanced Materials, Far Eastern Federal University, 690950 Vladivostok, Russia

2. Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia

3. Istituto di Struttura della Materia-CNR (ISM-CNR), Strada Statale 14 km 163.5, 34149 Trieste, Italy

4. Department of Physics, National Changhua University of Education, No. 1, Jinde Rd., Changhua City, Changhua County 50007, Taiwan

5. Institute of Strength Physics and Materials Science, Tomsk 634055, Russia

Abstract

It is discovered that in 2D rare-earth metalloxenes the capping layer enables the modification of the stacking order within metalloxene film and induces changes in the electronic band-structure and magnetic ground-state.

Funder

Russian Science Foundation

National Science and Technology Council

Publisher

Royal Society of Chemistry (RSC)

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