Defect stabilization and reverse annealing in ZnO implanted with nitrogen at room and cryogenic temperature
Author:
Affiliation:
1. Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway
2. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
Funder
Research Council of Norway
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5022152
Reference34 articles.
1. A comprehensive review of ZnO materials and devices
2. ZnO nanostructures for optoelectronics: Material properties and device applications
3. Ferromagnetism of ZnO and GaN: A Review
4. Origin ofp-type doping difficulty in ZnO: The impurity perspective
5. Doping Asymmetry Problem in ZnO: Current Status and Outlook
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