Catastrophic optical damage in GaInN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121619
Reference13 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
2. Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
3. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
4. InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
5. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
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1. Evidence of optically induced degradation in gallium nitride optoelectronic devices;Applied Physics Express;2018-10-12
2. Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage;Microelectronics Reliability;2014-09
3. Low threshold for optical damage in AlGaN epilayers and heterostructures;Journal of Applied Physics;2013-11-28
4. Applications of high-power laser technology to wide-bandgap nitride semiconductor processing;SPIE Proceedings;2002-09-09
5. Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics;SPIE Proceedings;2001-04-17
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