Evidence of optically induced degradation in gallium nitride optoelectronic devices-Reference-Cited by-同舟云学术

Evidence of optically induced degradation in gallium nitride optoelectronic devices

Published:2018-10-12 Issue:11 Volume:11 Page:111002
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

De Santi Carlo^ORCID,Caria Alessandro,Renso Nicola,Dogmus Ezgi,Zegaoui Malek,Medjdoub Farid,Meneghesso Gaudenzio^ORCID,Zanoni Enrico^ORCID,Meneghini Matteo^ORCID

Funder

Università degli Studi di Padova

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=11/a=111002/pdf

Reference46 articles.

1. Light emitting diodes reliability review

2. Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes

3. Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes

4. Degradation of GaN-based quantum well light-emitting diodes

5. Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

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