Low threshold for optical damage in AlGaN epilayers and heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4834520
Reference37 articles.
1. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
2. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
3. Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire
4. Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown $a$-Plane GaN
5. Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
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1. Performance degradation of Si device with the change of carrier lifetime under laser irradiation;SPIE Proceedings;2017-05-12
2. Development of Deep UV LEDs and Current Problems in Material and Device Technology;Semiconductors and Semimetals;2017
3. Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers;Current Applied Physics;2016-06
4. Spectral dependence of carrier lifetime in high aluminum content AlGaN epitaxial layers;Journal of Applied Physics;2015-08-28
5. Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content;Optics Express;2015-07-22
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