Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations-Reference-Cited by-同舟云学术

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Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Published:2012-02-06 Issue:6 Volume:100 Page:061111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Francesco Pecora Emanuele,Zhang Wei,Yu. Nikiforov A.,Zhou Lin,Smith David J.,Yin Jian,Paiella Roberto,Dal Negro Luca,Moustakas T. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3681944

Reference28 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

3. Ultraviolet light-emitting diodes based on group three nitrides

4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

5. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

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2. Recent Research in Optical Characteristics of Nitride Based Nanoscale Heterostructures for UV Applications;Lecture Notes in Electrical Engineering;2022-09-14

3. III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis;Progress in Quantum Electronics;2022-08

4. Optical net gain measurement on Al_0.07Ga_0.93N/GaN multi-quantum wells;Optics Express;2022-06-28

5. Nanoscale and quantum engineering of III-nitride heterostructures for high efficiency UV-C and far UV-C optoelectronics;Japanese Journal of Applied Physics;2021-10-12

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