Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions
Author:
Affiliation:
1. Department of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, South Korea
Funder
Samsung
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4977564
Reference20 articles.
1. Mechanical and Electronic Properties of Thin-Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications
2. Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes
3. Extremely Bendable, High-Performance Integrated Circuits Using Semiconducting Carbon Nanotube Networks for Digital, Analog, and Radio-Frequency Applications
4. Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending
5. Highly Flexible Microcrystalline Silicon n-Type TFT on PEN Bent to a Curvature Radius of 0.75 mm
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