Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending-Reference-Cited by-同舟云学术

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Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending

Published:2013-01 Issue: Volume:528 Page:82-85
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee M.H.,Hsieh B.-F.,Chang S.T.

Funder

National Science Council

National Taiwan Normal University

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Flexible AM OLED panel driven by bottom-contact OTFTs

2. Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C

3. Electrical response of amorphous silicon thin-film transistors under mechanical strain

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1. 67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display;SID Symposium Digest of Technical Papers;2022-06

2. Modeling of the electrical characteristics of an organic field effect transistor in presence of the bending effects;Organic Electronics;2021-01

3. Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates;Semiconductor Science and Technology;2020-05-22

4. Experimental validation of the surface state distribution model in the Suzuki theory to qualify the thin film surface materials;Solid-State Electronics;2019-04

5. Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs;IEEE Journal of the Electron Devices Society;2017-11

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