Electrical characteristics of silicon nanowire CMOS inverters under illumination-Reference-Cited by-同舟云学术

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Electrical characteristics of silicon nanowire CMOS inverters under illumination

Published:2018-02-01 Issue:3 Volume:26 Page:3527
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Yoo Jeuk,Kim Yoonjoong,Lim Doohyeok,Kim Sangsig

Funder

Brain Korea 21

National Research Foundation of Korea (NRF)

Samsung

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference38 articles.

1. High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm

2. Metal-Insulator-Semiconductor Photodetectors

3. Ultrasensitive solution-cast quantum dot photodetectors

4. A Novel Logarithmic Response CMOS Image Sensor With High Output Voltage Swing and In-Pixel Fixed-Pattern Noise Reduction

5. Digital cameras with designs inspired by the arthropod eye

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1. Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review;Nanotechnology;2023-02-20

2. Functional Devices from Bottom-Up Silicon Nanowires: A Review;Nanomaterials;2022-03-22

3. Hybrid Graphene-Perovskite Quantum Dot Photodetectors With Solar-Blind UV and Visible Light Response;IEEE Photonics Technology Letters;2022-01-15

4. Imaging Array and Complementary Photosensitive Inverter Based on P-Type SnO Thin-Film Phototransistors;IEEE Electron Device Letters;2021-07

5. Photodetectors based on controllable growth of large-area graphene films;Thin Solid Films;2020-09

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