Nitrogen vacancies at InN (11¯00) surfaces: A theoretical study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3409224
Reference20 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Rietveld refinement for indium nitride in the 105–295 K range
3. Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations
4. First-principles calculations for defects and impurities: Applications to III-nitrides
5. Band structures and optical spectra of InN polymorphs: Influence of quasiparticle and excitonic effects
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1. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives;physica status solidi (a);2022-02-24
2. High-temperature crystallinity restoring layers and their optimal positions for ultra-thick InGaN/GaN multiple-quantum-well structures;CrystEngComm;2021
3. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives;Journal of Applied Physics;2020-06-07
4. Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells;Journal of Applied Physics;2020-01-07
5. Green laser diodes with constant temperature growth of InGaN/GaN multiple quantum well active region;Applied Physics Express;2019-05-31
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