Physical and electrical properties of a Si3N4/Si/GaAs metal–insulator–semiconductor structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1403683
Reference21 articles.
1. Characteristics of the low-temperature-deposited SiO2-Ga0.47In0.53As metal/insulator/semiconductor interface
2. A novel passivation technology of InGaAs surfaces using Si interface control layer and its application to field effect transistor
3. Nearly ideal electronic properties of sulfide coated GaAs surfaces
4. Accumulation capacitance for GaAs‐SiO2interfaces with Si interlayers
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1. The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes;Advanced Materials Research;2015-07
2. Improved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-01
3. Vibrational and dielectric properties of α-Si3N4 from density functional theory;Materials Chemistry and Physics;2014-09
4. High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning;Applied Physics Letters;2012-02-13
5. Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate;Journal of Applied Physics;2008-04
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