Implantation‐enhanced interdiffusion of CdTe‐ZnTe heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354693
Reference33 articles.
1. Implantation disordering of AlxGa1−xAs superlattices
2. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
3. Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties
4. Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces
5. Damage generation and annealing in Ga+implanted GaAs/(Ga,Al)As quantum wells
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interdiffusion mechanisms in CdTe/CdMgZnTe:N modulation-doped heterostructures;Journal of Applied Physics;2000-04-15
2. Monitoring of intermixing and interdiffusion by x‐ray diffraction of ion‐implanted quantum‐well structures;Journal of Applied Physics;1996-02-15
3. Intermixing produced by ion implantation: Case of II–VI semiconductor multilayers;Journal of Applied Physics;1995-09-15
4. An Optical Study of Interdiffusion in Strained InP-Based Heterostructures;Japanese Journal of Applied Physics;1995-01-15
5. Ion‐implantation induced interdiffusion in CdTe/CdMgTe quantum wells;Applied Physics Letters;1994-12-19
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