Author:
Vieu C.,Schneider M.,Launois H.,Descouts B.
Subject
General Physics and Astronomy
Cited by
10 articles.
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1. Rutherford backscattering analysis of damage in ion implanted;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03
2. Chapter 7 Ion Implantation into Quantum-Well Structures;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
3. Ion damage buildup and amorphization processes in GaAs–AlxGa1−xAs multilayers;Journal of Applied Physics;1996-09
4. Quantum‐well intermixing for optoelectronic integration using high energy ion implantation;Journal of Applied Physics;1995-09-15
5. Ion damage buildup and amorphization processes in AlxGa1−xAs;Journal of Applied Physics;1995-01