Fabrication of strained silicon on insulator by strain transfer process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1991987
Reference17 articles.
1. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
2. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
3. Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates
4. Electron and hole mobility enhancement in strained SOI by wafer bonding
5. SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen
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2. Analytical drain current model of strained junctionless nanowire tunnel field‐effect transistor fabricated on virtual substrate;IET Circuits, Devices & Systems;2020-11
3. Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate;IEICE Transactions on Electronics;2016
4. Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer;JSTS:Journal of Semiconductor Technology and Science;2013-12-31
5. Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative study;Current Applied Physics;2013-10
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