Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence-Reference-Cited by-同舟云学术

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Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

Published:2015-12-21 Issue:25 Volume:107 Page:251106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pozina Galia¹^ORCID,Ciechonski Rafal²,Bi Zhaoxia³,Samuelson Lars²³,Monemar Bo¹³⁴

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden

2. GLO AB, Scheelevägen 22, SE-22363 Lund, Sweden

3. Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden

4. TokyoUniversity of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

Funder

Energimyndigheten (Swedish Energy Agency)

Vetenskapsrådet (VR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4938208

Reference17 articles.

1. Efficiency droop in nitride-based light-emitting diodes

2. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

3. The efficiency challenge of nitride light-emitting diodes for lighting

4. Defect related issues in the “current roll-off” in InGaN based light emitting diodes

5. Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

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