Empirical determination of the energy band gap narrowing in p+silicon heavily doped with boron
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4902066
Reference30 articles.
1. Measuring and modeling minority carrier transport in heavily doped silicon
2. Unified apparent bandgap narrowing in n- and p-type silicon
3. Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation
4. Empirical determination of the energy band gap narrowing in highly doped n+ silicon
5. Surface recombination velocity of highly dopedn‐type silicon
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