Stable Dopant-Free Electron-Selective Contact for Silicon Solar Cells-Reference-Cited by-同舟云学术

Stable Dopant-Free Electron-Selective Contact for Silicon Solar Cells

Published:2023-10-31 Issue:21 Volume:6 Page:11234-11241
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Wang Wenxian¹^ORCID,Cai Lun²,Meng Lanxiang³,Chen Nuo²^ORCID,Wei Huiqi¹,Hong Yang¹,Chen Yongjuan¹,Zeng Linyi⁴,Liang Zongcun¹^ORCID

Affiliation:

1. Institute for Solar Energy Systems, School of Physics, Sun Yat-Sen University, Guangzhou 510006, P. R. China

2. Guangzhou High-Tech Zone Institute for Energy Technology Co. Ltd., Guangzhou 510730, P. R. China

3. School of Materials Science and Engineering, Anyang Institute of Technology, Anyang 455000, P. R. China

4. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.3c02133

Reference49 articles.

1. Advancements in solar technology, markets, and investments – A summary of the 2022 ISA World Solar Reports

2. Status and perspectives of crystalline silicon photovoltaics in research and industry

3. Silicon heterojunction solar cells with up to 26.81% efficiency achieved by electrically optimized nanocrystalline-silicon hole contact layers

4. Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses

5. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

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