Overlayer effects in the critical-point analysis of ellipsometric spectra: Application to InxGa1−xAs alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2902502
Reference18 articles.
1. Optical properties ofIn1−xGaxAsyP1−yfrom 1.5 to 6.0 eV determined by spectroscopic ellipsometry
2. Optical spectra of SixGe1−xalloys
3. Modeling AlxGa1−xAs optical constants as functions of composition
4. Dielectric response of strained and relaxed Si1−x−yGexCy alloys grown by molecular beam epitaxy on Si(001)
5. Optical properties of AlxGa1−xP (0⩽x⩽0.52) alloys
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1. Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si;Applied Surface Science;2017-11
2. Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3;Journal of Applied Physics;2016-12-21
3. New method and treatment technique applied to interband transition in GaAs1−x Px ternary alloys;Open Physics;2011-01-01
4. Effect of different P/As ratio on the optical and structural properties of GaAs1−xPx/GaAs;Surface and Interface Analysis;2010-03-29
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