Dielectric response of strained and relaxed Si1−x−yGexCy alloys grown by molecular beam epitaxy on Si(001)

Author:

Lange Rüdiger,Junge Kelly E.,Zollner Stefan,Iyer S. S.,Powell A. P.,Eberl K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures;Nano Letters;2022-08-26

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3. Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%;Applied Surface Science;2017-11

4. Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-11

5. Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry;Applied Physics Letters;2014-07-21

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