Fabrication and characterization of sputtered Cu2O:N/c-Si heterojunction diode
Author:
Affiliation:
1. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8550, Japan
2. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8550, Japan
Funder
New Energy and Industrial Technology Development Organization (NEDO)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4986084
Reference32 articles.
1. Hole Selective MoOx Contact for Silicon Solar Cells
2. p-CuO/n-Si heterojunction solar cells with high open circuit voltage and photocurrent through interfacial engineering
3. High-Performance TiO2-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells
4. High Photovoltage Generation at Minority-Carrier Controlled n-Si/p-CuI Heterojunction with Morphologically Soft CuI
5. Efficient silicon solar cells with dopant-free asymmetric heterocontacts
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