Analysis of the dark current in the bulk of InAs diode detectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362734
Reference16 articles.
1. Technology development for InSb infrared imagers
2. InAsp‐ndiodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy
3. Monolithic integration of InAs photodiode and GaAs MESFET
4. Room-temperature Cd-diffused InAsSbP diodes for methane gas detection
5. Room‐temperature InAsxSbyP1−x−ylight‐emitting diodes for CO2detection at 4.2 μm
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