Room‐temperature InAsxSbyP1−x−ylight‐emitting diodes for CO2detection at 4.2 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102899
Reference9 articles.
1. Chapter 3 Semiconductor Lasers with Wavelengths Exceeding 2 μm
2. Laser oscillation at 3-4 µm optically pumped InAs<inf>1-x-y</inf>Sb<inf>x</inf>P<inf>y</inf>
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1. Calculation of tunable type-II band alignments in InAsxSbyP1−x−y/InAs heterojunctions;Japanese Journal of Applied Physics;2015-11-27
2. Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs;Journal of Applied Physics;2002-02
3. Light Emitting Diodes Fabricated from Liquid Phase Epitaxial InAs/InAsxP1-x-ySby/InAsx'P1-x'-y'Sby' and InAs/InAs1-xSbx Multi-Layers;Crystal Research and Technology;2000-05
4. Study of current leakage in InAs p–i–n photodetectors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
5. Long Wavelength (λ > 2 μm) Semiconductor Lasers;Semiconductor Lasers II;1999
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