Charge transport mechanism in low temperature polycrystalline silicon (LTPS) thin-film transistors-Reference-Cited by-同舟云学术

Charge transport mechanism in low temperature polycrystalline silicon (LTPS) thin-film transistors

Published:2019-02 Issue:2 Volume:9 Page:025321
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Huzaibi Hassan Ul¹²³^ORCID,Shi Xuewen¹²³^ORCID,Geng Di¹²³,Lu Nianduan¹²³^ORCID,Li Ling¹²³^ORCID,Liu Ming¹²³

Affiliation:

1. Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China

Funder

Beijing Training Project for the Leading Talents in S&T

National key research and development program

Strategic Priority Research Program of Chinese Academy of Science

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5082994

Reference19 articles.

1. Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

2. Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

3. TFT-Directed Electroplating of RGB Luminescent Films without a Vacuum or Mask toward a Full-Color AMOLED Pixel Matrix

4. Design, fabrication and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin film transistors

5. Flicker modeling scheme of liquid crystal displays based on current leakage without information about TFT parameters

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