Design, fabrication and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin film transistors
Author:
Affiliation:
1. Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin, China
Funder
National Natural Science Foundation of China (NSFC)
China Postdoctoral Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4938517
Reference24 articles.
1. Optimum design considerations for silicon piezoresistive pressure sensors
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5. Two dimensional carbon nanotube based strain sensor
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