Fermi level pinning and band bending in δ-doped BaSnO3
Author:
Affiliation:
1. Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
Funder
Samsung Science and Technology Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0042515
Reference43 articles.
1. High Mobility in a Stable Transparent Perovskite Oxide
2. High-mobility BaSnO3 grown by oxide molecular beam epitaxy
3. Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films
4. Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature
5. Probing the Electronic Structures of Ternary Perovskite and Pyrochlore Oxides Containing Sn4+ or Sb5+
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