Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films-Reference-Cited by-同舟云学术

Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films

Published:2017 Issue:23 Volume:5 Page:5730-5736
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Prakash Abhinav¹²³⁴^ORCID,Xu Peng¹²³⁴,Wu Xuewang⁵²³⁴,Haugstad Greg⁶²³⁴,Wang Xiaojia⁵²³⁴,Jalan Bharat¹²³⁴^ORCID

Affiliation:

1. Chemical Engineering and Materials Science

2. University of Minnesota

3. Minneapolis

4. USA

5. Mechanical Engineering

6. Characterization Facility

Abstract

Adsorption-controlled growth and strong charge compensation accompanied by decreased electron mobility due to cation non-stoichiometry was discovered in epitaxial BaSnO₃ films using a hybrid MBE approach.

Funder

Air Force Office of Scientific Research

Division of Materials Research

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00190H

Reference41 articles.

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4. BaSnO3 as a channel material in perovskite oxide heterostructures

5. Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions

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