Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin films
Author:
Affiliation:
1. Peter Grünberg Institute and JARA-FIT, FZ Jülich, D-52425 Jülich, Germany
Funder
Helmholtz Association
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/4/1.4919697.pdf?itemId=/content/aip/journal/adva/5/4/10.1063/1.4919697&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference28 articles.
1. Nanoionics-based resistive switching memories
2. Complementary resistive switches for passive nanocrossbar memories
3. Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
4. Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory
5. Scaling Potential of Local Redox Processes in Memristive SrTiO $_{3}$ Thin-Film Devices
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3. Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental study;ACS APPL MATER INTER;2022
4. Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study;ACS Applied Materials & Interfaces;2022-07-22
5. Unravelling the Origin of Ultra‐Low Conductivity in SrTiO 3 Thin Films: Sr Vacancies and Ti on A‐Sites Cause Fermi Level Pinning;Advanced Functional Materials;2022-07-07
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