Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study-Reference-Cited by-同舟云学术

Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study

Published:2022-07-22 Issue:30 Volume:14 Page:34822-34834
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Barman Arabinda¹²,Das Dip¹^ORCID,Deshmukh Sujit¹^ORCID,Sarkar Pranab Kumar³,Banerjee Debosmita¹^ORCID,Hübner René⁴^ORCID,Gupta Mukul⁵,Saini Chetan Prakash⁶,Kumar Shammi¹^ORCID,Johari Priya¹^ORCID,Dhar Sankar¹^ORCID,Kanjilal Aloke¹^ORCID

Affiliation:

1. Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India

2. Department of Physics, Dinhata College, Dinhata, West Bengal 736 135, India

3. Department of Applied Sciences and Humanities, Assam University, Silchar, Assam 788 011, India

4. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dersden 01328, Germany

5. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452 001, India

6. School of Physical Sciences, Jawaharlal Nehru University, Delhi 110067, India

Funder

Shiv Nadar University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c05089

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1. Role of Fe Doping in Tuning the Band Gap of TiO2 for the Photo-Oxidation-Induced Cytotoxicity Paradigm

2. Nb‐Dopant‐Induced Tuning of Optical and Electrical Property of Anatase TiO 2 Nanocrystals

3. Design of Oxygen Vacancy Configuration for Memristive Systems

4. Complementary Resistive Switching and Synaptic-Like Memory Behavior in an Epitaxial SrFeO2.5 Thin Film through Oriented Oxygen-Vacancy Channels

5. Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory

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