Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties-Reference-Cited by-同舟云学术

Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties

Published:2010-03-15 Issue:6 Volume:107 Page:064314
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hiller D.,Zierold R.,Bachmann J.,Alexe M.,Yang Y.,Gerlach J. W.,Stesmans A.,Jivanescu M.,Müller U.,Vogt J.,Hilmer H.,Löper P.,Künle M.,Munnik F.,Nielsch K.,Zacharias M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3327430

Reference37 articles.

1. Synthesis and Surface Engineering of Complex Nanostructures by Atomic Layer Deposition

2. Atomic Layer Deposition of Silicon Oxide Thin Films by Alternating Exposures to Si[sub 2]Cl[sub 6] and O[sub 3]

3. ALD of SiO[sub 2] at Room Temperature Using TEOS and H[sub 2]O with NH[sub 3] as the Catalyst

4. Self-Limited Pore Size Reduction of Mesoporous Silica Membranes via Pyridine-Catalyzed Silicon Dioxide ALD

5. Growth of SiO 2 at Room Temperature with the Use of Catalyzed Sequential Half-Reactions

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