Effects of 6H-SiC surface reconstruction on lattice relaxation of AlN buffer layers in molecular-beam epitaxial growth of GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1533855
Reference10 articles.
1. Undoped AlGaN/GaN HEMTs for microwave power amplification
2. GaN/AlGaN high electron mobility transistors with f of 110 GHz
3. Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy
4. Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H–SiC substrate by HCl gas etching
5. Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy
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