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2. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p–n junction LED;Akasaki;Journal of Luminescence,1989
3. Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−x Alx N (0;Akasaki;Journal of Crystal Growth,1989
4. Growth and applications of group III-nitrides;Ambacher;Journal of Physics D: Applied Physics,1998
5. Hydrogen in gallium nitride grown by MOCVD;Ambacher;Physica Status Solidi (a),1997