Defect identification in semiconductor alloys using deep level composition dependence. II. Application to GaAs1−xPx
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344522
Reference42 articles.
1. Theory of Substitutional Deep Traps in Covalent Semiconductors
2. Substitutional Defect Pairs inGaAs1−xPx
3. Deep levels produced by pairs of impurities in InP
4. Deep levels produced by pairs of impurities in InP
5. Effects of the environment on point‐defect energy levels in semiconductors
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1. Deep levels including lattice relaxation: first- and second-neighbor effects;Journal of Physics and Chemistry of Solids;2000-11
2. Defect identification in semiconductors by Brewster angle spectroscopy;Journal of Applied Physics;1993-05-15
3. Deep-level wave functions including lattice-relaxation effects;Physical Review B;1993-02-15
4. Simultaneous detection of optical constants ε1and ε2by Brewster angle reflectivity measurements;Applied Physics Letters;1992-05-11
5. Brewster angle spectroscopy: A new method for characterization of defect levels in semiconductors;Applied Physics Letters;1991-09-16
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