Nucleation of islands and continuous high-quality In2O3(001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO2(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3415539
Reference21 articles.
1. Surface Electron Accumulation and the Charge Neutrality Level inIn2O3
2. Pulsed laser deposition of oriented In2O3on (001) InAs, MgO, and yttria‐stabilized zirconia
3. High electron mobility of indium oxide grown on yttria-stabilized zirconia
4. Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia
5. A-plane sapphire: A well-matched substrate for epitaxial growth of indium tin oxide
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