Photoluminescence of a tensilely strained silicon quantum well on a relaxed SiGe buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1766073
Reference19 articles.
1. High-mobility Si and Ge structures
2. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
3. Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells
4. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
5. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
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1. New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET;ACS Applied Materials & Interfaces;2020-12-26
2. 30-bandk·pmodel of electron and hole states in silicon quantum wells;Physical Review B;2013-11-19
3. Epitaxy of Strained Si/Si1-xGexHeterostructures;Silicon Technologies;2013-03-19
4. Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers;Materials Science in Semiconductor Processing;2013-02
5. Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer;Applied Physics Letters;2012-03-05
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