Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3525622
Reference13 articles.
1. M. Razeghi and M. Henini,Optoelectronic Devices: III-Nitrides(Elsevier, Oxford, 2004), pp. 1–9.
2. III–Nitride UV Devices
3. III-nitride based deep ultraviolet light sources
4. The future of ultraviolet LEDs
5. 346 nm Emission from AlGaN Multi-Quantum-Well Light Emitting Diode
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4. Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures;Journal of Applied Physics;2014-01-28
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