Introduction-Reference-Cited by-同舟云学术

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Introduction

Published:2005 Issue: Volume: Page:1-8
ISSN:
Container-title:Optoelectronic Devices: III Nitrides
language:
Short-container-title:

Author:

Razeghi M.,Henini M.

Publisher

Elsevier

Reference15 articles.

1. Short-wavelength solar-blind detectors-status, prospects, and markets

2. Non-linear Optical Properties of GaN 50 B;Miragliotta,1998

3. Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel

4. Das Laser-Farbfensehen;Lotsch;Laser,1970

5. Photoemission from GaN

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical study of InGaN tandem solar cells with intermediate bands;physica status solidi (RRL) - Rapid Research Letters;2016-12-23

2. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2015-09-28

3. Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm;Journal of Applied Physics;2010-12-15

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